The double role of Ga droplets in the self-catalyzed growth of GaAs nanowires on SiO_x/Si(111) substrates

We have investigated the in-situ surface modification of a SiOx/Si(111) substrate by Ga droplets and its effect on the subsequent self-catalyzed growth of GaAs nanowires. Using a procedure of Ga droplet formation and subsequent re-evaporation prior to the nanowire growth, we found that the number density of nanowires at a given growth temperature can be varied deliberately within four orders of magnitude without affecting the nanowire diameter. A detailed study of the Ga droplet formation in a wide range of substrate temperatures revealed the physical processes that control the number density and size of the droplets.