Thermally Induced Spin Transfer Torque on MgO-based magnetic tunnel junctions using microstrip based resonator

Magnetic tunnel junctions have been commonly used in spintronics applications, such as magnetic random access memory (M-RAM), spin transfer torque RAM (STT-RAM) and hard disc drive (HDD) because of high storage capacity. A spin polarized current flowing through a ferromagnetic layer can exert spin-transfer-torque (STT) on the local magnetization. When we apply thermal gradient across the junction we can induce what is called thermal spin transfer torque (T-STT). In this study, the microresonator FMR technique is used in order to analyze how the ferromagnetic resonance signal corresponding to the free layer of an in-plane MgO-based tunnel junction device is modified in the presence of a temperature gradients across the barrier. Details of resonator fabrication and preliminary measurements are presented. This work is supported by DFG-SPP1538.