Strain and particle size analysis in ion beam synthesized SiC nanoparticles using Raman scattering studies

We study the strain and particle size analysis of ion beam synthesized SiC nanoparticles (NPs) embedded in Si matrix using Raman and low-frequency Raman scattering (LFRS). 300 keV C⁺ ions with the fluence of 2 × 10¹⁷ ions/cm² were implanted on Si substrate at three different substrate temperatures (300, 500 and 650 °C). Raman scattering analyses confirm the formation of 3C-SiC NPs in Si matrix. Relative strain in 3C-SiC NPs estimated from Raman scattering was found to decrease with increase of substrate temperature. The particle size distribution of 3C-SiC NPs was estimated from the signature of localized acoustic phonon modes observed in the low frequency region (ω<40cm^-1) of LFRS spectra. The estimated particle size of the SiC is found to be in good agreement with the TEM analysis.