Characterization of vacancy-type defects in ion implanted SiC by positron annihilation spectroscopy
Characterization of vacancy-type defects in ion implanted SiC by positron annihilation spectroscopy
Brauer, G.
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Vortrag (Konferenzbeitrag)
University of the Witwatersrand (Schonland Research Centre for Nuclear Sciences), Johannesburg, 12.01.1998
Permalink: https://www.hzdr.de/publications/Publ-2569