Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Liquid Ga droplets play a double role in the self-catalyzed growth of GaAs nanowires on Si(111) substrates covered with a native SiO_x layer: they induce the formation of nano-sized holes in SiO_x and then drive the uniaxial nanowire growth directly onto the underlying Si. The independent control of the two mechanisms is a prerequisite for mastering the growth of nanowires, but it is challenging in a conventional growth procedure where they both take place under the same droplets. To that end, we have developed an in situ procedure where the Ga droplets used for the formation of SiO_x holes are removed before new Ga droplets drive the growth of GaAs nanowires. In that way, it was made possible to study the interaction between Ga droplets and SiO_x, to create holes in SiO_x with controlled number density and size and, finally, to grow GaAs nanowires only within those holes. Our results show unprecedented control of the nanowire nucleation with unique possibilities: (1) deliberate control of the number density of nanowires within three orders of magnitude (10⁶-10⁹ cm^-2) without patterning the substrate and without changing the growth conditions, (2) highly synchronous nucleation events and, thus, exceptionally narrow nanowire length distributions (standard deviation < 1 % for 3 mm long nanowires), (3) high yield of vertical nanowires up to 80 % (against GaAs islands), (4) highly reproducible results, and (5) independent control of the nanowire diameter from the number density. We anticipate that our methodology could be also exploited for different materials or other types of nanostructures.