Activation of acceptor levels in Mn implanted Si by pulsed laser annealing

In this paper, we report the magnetic and electrical properties of Mn implanted nearly intrinsic Si wafers after subsecond thermal treatment. Activation of acceptors is realized in pulsed laser annealing (PLA) films with a free hole concentration of 6.29  ×  10^20 cm−3 while the sample annealed by rapid thermal annealing (RTA) shows n-type conductivity with a much smaller free electron concentration in the order of 10^15 cm−3. Ferromagnetism is probed for all films by a SQUID magnetometer at low temperatures. The formation of ferromagnetic MnSi1.7 nanoparticles which was proven in RTA films can be excluded in Mn implanted Si annealed by PLA.