Cluster tool for in situ processing and comprehensive characterization of thin films at high temperatures
Cluster tool for in situ processing and comprehensive characterization of thin films at high temperatures
Wenisch, R.; Lungwitz, F.; Hanf, D.; Heller, R.; Zscharschuch, J.; Hübner, R.; von Borany, J.; Abrasonis, G.; Gemming, S.; Escobar Galindo, R.; Krause, M.
Abstract
A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/ amorphous Si (~60 nm)/ Ag (~30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650°C. Its initial and final composition, stacking order and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.
Keywords: Cluster tool; thin films; in situ; high temperature; Rutherford backscattering; Raman spectroscopy; ellipsometry; metal-induced crystallization
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 27732) publication
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Analytical Chemistry 90(2018), 7837-7842
DOI: 10.1021/acs.analchem.8b00923
Cited 5 times in Scopus -
Vortrag (Konferenzbeitrag)
16th International Conference on Plasma Surface Engineering, 16.-21.09.2018, Garmisch - Partenkirchen, Deutschland -
Vortrag (Konferenzbeitrag)
XV Congreso Nacional de Materiales/ Iberian Meeting on Materials Science, 04.-06.07.2018, Salamanca, Spanien
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- Final Draft PDF 7,7 MB Zweitveröffentlichung
Permalink: https://www.hzdr.de/publications/Publ-27732
