Defect-induced exchange bias in a single SrRuO3 layer
Defect-induced exchange bias in a single SrRuO3 layer
Wang, C.; Chen, C.; Chang, C.-H.; Tsai, H.-S.; Pandey, P.; Xu, C.; Böttger, R.; Chen, D.; Zeng, Y.-J.; Gao, X.; Helm, M.; Zhou, S.
Abstract
Exchange bias stems from the interaction between different magnetic phases and therefore it generally occurs in magnetic multilayers. Here we present a large exchange bias in a single SrRuO3 layer induced by helium ion irradiation. When the fluence increases, the induced defects not only suppress the magnetization and the Curie temperature, but also drive a metal-insulator transition at a low temperature. In particular, a large exchange bias field up to ~ 0.36 T can be created by the irradiation. This large exchange bias is related to the coexistence of different magnetic and structural phases that are introduced by embedded defects. Our work demonstrates that spintronic properties in complex oxides can be created and enhanced by applying ion irradiation.
Keywords: Exchange bias; Magnetization; Oxide thin film; Lattice distortion; Defect engineering
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 27835) publication
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ACS Applied Materials and Interfaces 10(2018)32, 27472-27476
DOI: 10.1021/acsami.8b07918
Cited 23 times in Scopus -
Poster
25th International Workshop on Oxide Electronic, 01.-03.10.2018, Les Diablerets, Switzerland
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