Advanced doping issues using nonequilibrium processing

In this talk I will introduce with a short view on the background of the transistor invention as a key element driving the topic of semiconductor doping. After that I will discuss examples of advanced doping including ion beam based and other methods: doping and alloying of germanium, hyperdoping of silicon, doping from deposited layers, doping of silicon nanowires, doping from deposited layers. In all cases the experiments were performed in correlation to nonequilibrium thermal processing using flash lamps in the millisecond time range.