Optical properties of ZnSxTe1-x synthesized by sulfur implantation
Optical properties of ZnSxTe1-x synthesized by sulfur implantation
Zhang, X.; Xu, M.; Li, Q.; Wang, M.; Akhmadaliev, S.; Zhou, S.; Wu, Y.; Guo, B.
Abstract
ZnSxTe1-x thin films were prepared by sulfur implantation into ZnTe grown by molecular beam epitaxy and subsequent pulsed laser melting. The chemical composition and layer thickness of the ZnSxTe1-x layer have been analyzed based on Rutherford backscattering spectrometry. Raman and photoluminescence spectroscopies were employed to reveal the optical properties of the ZnSxTe1-x layer. Raman spectra exhibit a redshift of the longitudinal optical photon modes with increasing sulfur concentration. The room temperature photoluminescence measurement indicates the appearance of the sulfur induced energy state in the bandgap.
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 29158) publication
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Nuclear Instruments and Methods in Physics Research B 442(2019), 24-27
DOI: 10.1016/j.nimb.2018.12.002
Permalink: https://www.hzdr.de/publications/Publ-29158