Effect of irradiation on defect coherence properties in silicon carbide
Effect of irradiation on defect coherence properties in silicon carbide
Abstract
We have thoroughly investigated the irradiation impact on the room-temperature spin coherence properties of silicon vacancies in SiC. We have measured the spin-lattice relaxation time and the spin coherence time depending on the irradiation particle (electron, neutron and proton), irradiation fluence and irradiation energy.
Involved research facilities
- Radiation Source ELBE DOI: 10.17815/jlsrf-2-58
Related publications
- DOI: 10.17815/jlsrf-2-58 is cited by this (Id 29577) publication
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Invited lecture (Conferences)
Ion Beam for future Technologies 2019, 01.-03.04.2019, Dubrovnik, Croatia
Permalink: https://www.hzdr.de/publications/Publ-29577