Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Oxides containing group III or group V elements (B₂O₃/Sb₂O₅ and P₂O₅/Sb₂O₅) are grown by plasma-assisted atomic layer deposition (ALD) on single-crystalline silicon and serve as dopant sources for conformal and shallow doping. Transport phenomena in ALD-oxide–Si structures during rapid thermal annealing (RTA) are investigated subsequently by X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and secondary ion mass spectrometry (SIMS). The XPS and TEM analyses of the annealed ALD oxide–Si structures demonstrate that the ALD oxide converts to a silicon oxide and partially evaporates during annealing. In addition, dopant-containing, spherical, and partially crystalline particles form in the oxide, and Si-P precipitates at the oxide–Si interface. After diffusion annealing at 1000 °C, the SIMS analyses reveal phosphorus and boron concentration profiles in the silicon substrate with maximum concentrations exceeding their solid solubility limits by roughly one order of magnitude. Experimental doping profiles of phosphorus and boron in silicon are compared with simulation results, considering a slight injection of self-interstitials and dynamical defect clustering.