Electronic properties of GaAs/InₓGa₁₋ₓAs and GaAs/InₓAl₁₋ₓAs core/shell nanowires studied by pump – probe THz spectroscopy

We report terahertz response of photoexcited core/shell nanowires. The obtained parameters of the localized surface plasmon mode allow us to estimate electron mobilities, concentrations and recombination lifetimes. The extracted mobilities reach 4000 cm²/V·s at room temperature, while the carrier lifetimes range from 80 to 300 ps, depending on the shell composition and the photoexcitation level.