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Cluster tool for in situ processing and comprehensive characterization of energy materials at high temperatures

Krause, M.; Wenisch, R.; Lungwitz, F.; Heras, I.; Janke, D.; Azkona, I.; Escobar Galindo, R.; Gemming, S.

Abstract

In situ processing and comprehensive characterization is essential for design and development of materials used and processed at high-temperatures. Here, a new cluster tool for processing and depth-resolved compositional, structural and optical characterization of layered
materials with thicknesses ranging from sub-nm to 1 μm at temperatures of -100 to 1000 °C is described [1]. The implemented techniques comprise
magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy and spectroscopic ellipsometry. The combination of techniques enables sample processing by scalable, clean, waste-free, and industry-relevant technologies, quantitative depth-profiling for elements with Z ≥ 6, structural and chemical characterization, sensitivity and nm-precise thickness and optical information for single layers, multilayers and composites. In this study, the cluster tool was used for i) metal-induced crystallization with layer-exchange of a-Si/ Ag layer stacks, and ii) for hightemperature characterization of two types of solar-selective coatings for concentrated solar power (CSP), namely Al Ti (O N )-based single and multilayers [2, 3] and an n-type doped solar-selective transparent conductive oxide [4]. Starting with an a-Si/ Ag bilayer stack, metal-induced silicon crystallization with partial layer exchange occurs at 540 °C. The final stack is approximately described by the sequence crystalline Si (c-Si)/ Ag/ c-Si. All the layers contain minor fractions of the other element. Moreover, the Si volume fraction comprises approximately 10 % of amorphous Si. For the CSP coatings, no compositional and structural changes were found up to a maximum temperature of 840 °C in vacuum. Both types of solar-selective coatings thus represent promising materials for the next generation of CSP technology.
[1] R. Wenisch et al., Anal. Chem. 90, 7837-7824 (2018)
[2] I. Heras et al., Sol. Energy Mat. Solar Cells, 176, 81-92 (2018)
[3] R. Escobar-Galindo et al., Sol. Energy Mat. Solar Cells, 185, 183-191 (2018)
[4] F. Lungwitz et al., submitted (2018)
Financial support by the EU, grant No. 645725, project FRIENDS , and the HGF via the W3 program (S.G.) is gratefully acknowledged.

Keywords: Cluster tool; in situ processing and analysis; high temperature; Rutherford backscattering; Raman spectroscopy; ellipsometry; metal-induced crystallization

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