Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents

Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one stored magnetic state to another depends on the multilayer structure of the device and the intrinsic properties of the materials used, which are difficult to control on a local scale. Here we demonstrate how focused helium ion beam irradiation can be used to modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. In-situ characterisation using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation in real-time, and using this, a multi-level storage element is demonstrated. The result is that current-driven spin-switching, with as little as 800 kA cm-2 can be achieved on predetermined areas of the film without the need for physical material patterning.