Thermoelectricity and electronic properties of Y1-xCexCrB4

Boron-rich materials combine chemical stability with refractory properties and, consequently, are interestingfor high-temperature thermoelectric applications. Therefore, the magnetic, electrical, and thermal transportproperties of the Y1−xCexCrB4series have been investigated here to employ the concept of correlation-enhancedthermoelectric properties. Combining x-ray diffraction and energy- or wavelength-dispersive spectrometry,we find a rather narrow stability range of Y1−xCexCrB4, only samples on the Y- and Ce-rich substitutionlimits (x=0,0.05,0.95,and 1) were obtained. Electrical resistivity data show a change from semiconducting(x=0) to metallic behavior upon Ce substitution (x0.95). From magnetic susceptibility measurements andx-ray absorption spectroscopy, we find a temperature-dependent intermediate valence state of Ce of about+3.5.However, a fit of the magnetic susceptibility data to the Coqblin-Schrieffer model yields a surprisingly highKondo temperature of about 1100 K. Together with the good thermal conductivity for the studied substitutionseries this impedes a suitable thermoelectric performance. Electronic structure calculations for YCrB4supportits narrow gap semiconducting nature in contrast to previous studies. Surprisingly, its electronic structure ischaracterized by pronounced van Hove singularities very close to the Fermi-levelEF. They originate fromnearly dispersionless Cr 3dz2−r2-derived bands in a large part of the Brillouin zone, suggesting the appearance ofelectronic instabilities upon rather small electron doping into these states