HSQ-based process to integrate vertical nanoscale devices
HSQ-based process to integrate vertical nanoscale devices
Amat, E.; Del Moral, A.; Engelmann, H.-J.; Borany, J.; Heinig, K.-H.; Pourteau, M.-L.; Rademaker, G.; Tiron, R.; Bausells, J.; Perez-Murano, F.
Abstract
The inherent three-dimensional topology of vNWs imposes several constraints to their fabrication and their integration in other circuits. We present here the use of Hydrogen silsesquioxane (HSQ) for the fabrication of single electron transistors (SETs) based on vNWs.
Keywords: single electron transistor; quantum dot; CMOS; Si nanowire; fabrication
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 33222) publication
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Vortrag (Konferenzbeitrag)
(Online Präsentation)
47th international conference on Micro and Nano Engineering, 20.-23.09.2021, Turin, Italy
Permalink: https://www.hzdr.de/publications/Publ-33222
