Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors
Colossal angular magnetoresistance in ferrimagnetic nodal-line semiconductors
Seo, J.; De, C.; Ha, H.; Lee, J. E.; Park, S.; Park, J.; Scurschii, I.; Choi, E. S.; Kim, B.; Cho, G. Y.; Yeom, H. W.; Cheong, S.-W.; Kim, J. H.; Yang, B.-J.; Kim, K.; Kim, J. S.
Abstract
Efcient magnetic control of electronic conduction is at the heart of spintronic functionality for memory and logic applications. Magnets with topological band crossings serve as a good material platform for such control, because their topological band degeneracy can be readily tuned by spin confgurations, dramatically modulating electronic conduction. Here we propose that the topological nodal-line degeneracy of spin-polarized bands in magnetic semiconductors induces an extremely large angular response of magnetotransport. Taking a layered ferrimagnet, Mn3Si2Te6, and its derived compounds as a model system, we show that the topological band degeneracy, driven by chiral molecular orbital states, is lifted depending on spin orientation, which leads to a metal–insulator transition in the same ferrimagnetic phase. The resulting variation of angular magnetoresistance with rotating magnetization exceeds a trillion per cent per radian, which we call colossal angular magnetoresistance. Our fndings demonstrate that magnetic nodal-line semiconductors are a promising platform for realizing extremely sensitive spin- and orbital-dependent functionalities.
Beteiligte Forschungsanlagen
- Hochfeld-Magnetlabor (HLD)
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Nature 599(2021), 576-581
DOI: 10.1038/s41586-021-04028-7
Cited 28 times in Scopus
Permalink: https://www.hzdr.de/publications/Publ-33568