I-V-T Characteristics and Temperature Sensor Performance of a Fully-2D WSe2/MoS2 Heterojunction Diode at Cryogenic Temperatures

In this work, we demonstrate the usability of a fully-2D-material based device consisting of MoS2/WSe2 heterojunction encapsu-lated by hBN and contacted by graphene as temperature sensor for linear temperature measurement at cryogenic temperatures. More precisely, temperatures in the range of 10 K up to 300 K were applied to the device while recording the I-V characteris-tics. From this, we had a deeper look on the current transport mechanism by obtaining the activation energy of the saturation current in the Arrhenius diagram. It is 1.3 eV, which can be related to the bandgap of MoS2 or WSe2 (both nominal 1.3 eV) as for traditional pn-junction diodes in bulk materials. Further-more, we applied a constant forward current to the device while measuring the voltage drop at different temperatures to investi-gate the temperature-sensor performance. In the range of 40 K up to 300 K, the sensitivity of the sensor is ~2 mV/K, which is comparable to Si devices, while the linearity is still lower (R2 ~ 0.94). On the other hand, the demonstrated device consists only of 2D materials and is, thus, substrate independent, ultra-thin, and can be fabricated on a fully flexible substrate in a low-cost process.