Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Defects remaining in Si after MeV ion implantation and annealing away from the peak of the nuclear energy deposition profile

Kögler, R.; Skorupa, W.; Yankov, R. A.; Posselt, M.; Danilin, A. B.

• Beitrag zu fremdem Sammelwerk
  Proc. 1998 Int. Conf. on Ion Implantation Technology, Kyoto, Japan, June 22-26, 1998, eds.: J. Matsuo, G. Takaoka, Y. Yamada; IEEE, Piscataway, USA, 1998, IEEE Publications 98EX144, p. 1117

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