Sub-band gap infrared absorption in Si implanted with Mg
Sub-band gap infrared absorption in Si implanted with Mg
Wang, M.; Shaikh, M. S.; Kentsch, U.; Heller, R.; Zhou, S.
Abstract
Single-crystalline Mg-implanted Si layers are synthesized by ion implantation followed by pulsed laser melting. The Mg doping concentration is reaching 10²¹ cm⁻³. The Raman, Rutherford backscattering spectrometry/channeling and particle induced x-ray emission measurements confirm the recrystallization of the Mg-implanted Si layer. A strong below band gap infrared absorption over the wavelength range of 1.4–6.2 µm (0.2–0.87 eV, in the mid-infrared range) has been observed in the Mg-implanted Si layers. It is associated with deep levels induced by Mg atoms at high implantation level. This work points out the potential of Mg-implanted Si for room-temperature light detection in a broad infrared range for the new generation of Si-based photonics.
Keywords: sub-band gap absorption; ion implantation; infrared photoresponse; deep-level impurity; Mg-implanted
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 35959) publication
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Semiconductor Science and Technology 38(2023), 014001
Online First (2022) DOI: 10.1088/1361-6641/aca3ca
Permalink: https://www.hzdr.de/publications/Publ-35959