Biodetection platforms based on the extended gate FETs

The abstract was not required for this event. In the following, a brief description of the lecture content is provided. The lecture covered the following topics: 1) Fundamental mechanisms of potentiometric biosensing based on field-effect transistors (FETs); 2) Overview of FET-sensor evolution leading to the use of extended gate (EG) FET configuration; 3) Detailed comparison between the traditional ISFET/BioFET and EG FET sensor architectures; 4) Application examples of biosensing using FET biosensors with nanoscopic sensing components (Si nanowires); 5) Cost-effective immunosensor realization using of-the-shelf electronic components with sensitivity comparable to state-of-the-art nanostructured FET biosensors; 6) Mechanism of nanoparticle-based amplification of potentiometric response in EG FET biosensors.