Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf
1 PublikationRoom-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques
Wen, S.; Shaikh, M. S.; Steuer, O.; Prucnal, S.; Grenzer, J.; Hübner, R.; Turek, M.; Pyszniak, K.; Reiter, S.; Fischer, I. A.; Georgiev, Y.; Helm, M.; Wu, S.; Luo, J.-W.; Zhou, S.; Berencen, Y.
Abstract
GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetec-tors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 l m. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology.
Keywords: Semiconductors; Photodetectors; GeSn; Implantation; Flash-lamp annealing
Beteiligte Forschungsanlagen
- Ionenstrahlzentrum DOI: 10.17815/jlsrf-3-159
Verknüpfte Publikationen
- DOI: 10.17815/jlsrf-3-159 is cited by this (Id 37456) publication
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Applied Physics Letters 123(2023), 081109
DOI: 10.1063/5.0166799
Cited 2 times in Scopus
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