Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Ta3N5 shows great potential as a semiconductor photoanode for solar water splitting. However, its performance is hindered by poor charge carrier transport and trapping due to a high density of defects that introduce electronic states deep within its bandgap. Here, we demonstrate that controlled Ti doping of Ta3N5 can dramatically reduce the concentration of deep-level defects and enhance its photoelectrochemical performance, yielding a sevenfold increase in photocurrent density and a 300 mV cathodic shift in photocurrent onset potential compared to undoped material. Comprehensive characterization reveals that Ti+4 ions substitute Ta+5 lattice sites, thereby introducing compensating acceptor states, reducing concentrations of nitrogen vacancies and reduced Ta+3 states, and thereby suppressing trapping and recombination. Importantly, Ti doping offers distinct advantages compared to Zr, an intensively investigated dopant of Ta3N5 in the same group of the periodic table. Specifically, Ti+4 and Ta+5 have more similar atomic radii, allowing for substitution without introducing lattice strain, and Ti exhibits a lower affinity for oxygen than Zr, enabling its incorporation without increasing the oxygen donor content. Consequently, we demonstrate that the electrical conductivity can be tuned by over seven orders of magnitude. Thus, Ti doping in Ta3N5 provides a powerful basis for precisely engineering the optoelectronic characteristics of Ta3N5 and to substantially improve its functional characteristics as an advanced photoelectrode for solar fuels applications.