Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

Flash lamp annealing (FLA) is an ultra-short annealing method which excellently meets the requirements of thin film processing and has already been used in microelectronics. Due to the relatively high hole mobility, thin Ge layers are highly interesting as a transistor channel material or generally as a functional layer both in CMOS technology and in the field of low-cost electronics. One possibility to realize ohmic contacts with low contact resistance is the use of metal germanides, especially the stoichiometric NiGe phase.
In this work, NiGe contacts on thin Ge films were fabricated by magnetron sputtering followed by FLA. The evolution of microstructure with increasing thermal budget was traced by transmission electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction. The electrical measurements focus on the determination of contact resistance by the circular transfer length method (cTLM). The contacts were fabricated by two different approaches, and the influence of different process steps on layer morphology and the uncertainty of the measurement was studied.