Study of photoluminescence in SiOxNy films implanted with Ge ions and annealed under the conditions of hydrostatic pressure
Study of photoluminescence in SiOxNy films implanted with Ge ions and annealed under the conditions of hydrostatic pressure
Tyschenko, I. E.; Zhuravlev, K. S.; Vandyshev, E. N.; Misiuk, A.; Yankov, R. A.; Rebohle, L.; Skorupa, W.
Abstract
no abstract delivered from author
- Semiconductors 35 (2001) 129
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