Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf

The chemical composition and interplanar spacing profiles as well the lateral homogeneity of AIIIBV heterostructures containing a highly strained In(x)Ga(1-x)As layer were investigated. The heterostructures grown by metallorganic chemical vapor deposition were chracterized by means of high resolution x-ray diffractometry, x-ray reflectometry and Rutherford backscattering. In order to analyze the experimental results an algorithm for calculating the x-ray profiles based on the Darwin diffraction theory has been worked out. The developed method was applied to find out: the dependence of the growth rate and the interface profiles of the highly strained In(x)Ga(1-x)As layer on the deposition time to supervise the growth process of a resonant cavity enhanced photodiode heterostructure for which a highly strained In(x)Ga(1-x)As layer is an essential part.