Detailed profiling of ion implantation induced excess vacancies in silicon

Detailed profiling of ion implantation induced excess vacancies in silicon

Peeva, A.

Abstract

Profiles of excess vacancies in silicon produced by ion implantation are studied by TEM.

Keywords: excess vacancies; Si; ion implantation

  • Sonstiger Vortrag
    Arbeitstreffen “Punktdefekte” TU Dresden, 01.-02.04.2004, Dresden, Deutschland

Permalink: https://www.hzdr.de/publications/Publ-9914